1/4 2011.11 - rev.a bi direction esd protection diode rsb33v ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) esd protection ? features 1)small mold type. (umd2) 2)high reliability. 3)bi-directionality. ? constructions silicon epitaxial planer ? structure ? absolute maximum ratings (ta=25c) symbol unit pd mw tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit conditions zener voltage v z 29.7 - 36.3 v i z =1ma reverse current i r - - 0.1 a v r =25v ct - - 30 pf v r =0v , f=1mhz *zener voltage (vz)shall be measured at 40ms after loading current. junction capacitance ? taping dimensions (unit : mm) parameter limits power dissipation 200 junction temperature 150 storage temperature ? 55 to + 150 parameter umd2 2.1 0.8min. 0.9min. rohm : umd2 jeita : sc - 901a jedec : sod - 323 dot (year week factory) 0.30.05 0.70.2 0.1 0.10.1 0.05 1.70.1 2.50.2 1.250.1 4.00.1 2.00.05 1.550.05 1.400.1 4.00.1 1.05 2.75 3.50.05 1.750.1 8.00.2 0.30.1 1.00.1 2.80.1 data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rsb33v 2/4 2011.11 - rev.a 0.01 0.1 1 10 25 30 35 40 45 ta= ? 25 c ta=125 c ta=75 c ta=25 c zener current:iz(ma) zener voltage:vz(v) vz - iz characteristics( ) apply voltage ta=150 c 0.01 0.1 1 10 25 30 35 40 45 zener current:iz(ma) zener voltage:vz(v) vz - iz characteristics(2) apply voltage ta= ? 25 c ta=125 c ta=75 c ta=25 c ta=150 c 0.001 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 ta=125 c ta=25 c ta=75 c reverse current:i r (na) reverse voltage v r (v) v r -i r characteristics(1) apply voltage ta=150 c 0.001 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 ta=125 c ta=25 c ta=75 c reverse current:i r (na) reverse voltage v r (v) v r -i r characteristics(2) apply voltage ta=150 c 1 10 100 0 5 10 15 20 25 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics(1) f=1mhz apply voltage 1 10 100 0 5 10 15 20 25 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics(2) f=1mhz apply voltage www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rsb33v 3/4 2011.11 - rev.a 20 22 24 26 28 30 32 34 36 38 40 zener voltage:vz(v) ta=25 c i z =1ma n=30pcs ave:32.73v vz dispersion map ave:34.52v apply voltage apply voltage 0 1 2 3 4 5 6 7 8 9 10 reverse current:i r (na) ta=25 c v r =25v n=30pcs ave:0.39na i r dispersion map apply voltage apply voltage ave:1.38na 0 1 2 3 4 5 6 7 8 9 10 capacitance between terminals:ct(pf) ta=25 c f=1mhz v r =0v n=20pcs ct dispersion map ave 9.07pf ave 8.86pf apply voltage apply voltage 10 100 1000 10000 0.1 1 10 dynamic impedance:zz( ) zener current(ma) zz - iz characteristics(1) apply voltage 1 10 100 1000 0.1 1 10 dynamic impedance:zz( ) zener current(ma) zz - iz characteristics(2) apply voltage 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 transient thermal impedance rth( c /w) rth(j - a) rth(j - c) on glass - epoxy substrate time(s) rth - t characteristics www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rsb33v 4/4 2011.11 - rev.a 0 5 10 15 20 25 30 no break at 30kv c=200pf r=0 c=150pf r=330 c=100pf r=1.5k ave 6.3kv electrostatic discharge test esd [kv] esd dispersion map(1) ave 26.5kv apply voltage 0 5 10 15 20 25 30 no break at 30kv c=200pf r=0 c=150pf r=330 c=100pf r=1.5k ave 8.9kv electrostatic discharge test esd [kv] esd dispersion map(2) apply voltage www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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